N-Channel MOSFET
Description
P1006BTF / P1006BTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID 47A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
47 29 150
Avalanche Current
IAS 38
Avalanche Energy
L = 0.
1 mH
EAS
72.
7
Power Dissipation
TC= 25 °C TC= 100°C
PD
48 19
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 62.
5 2.
6
UNITS °C / W
REV 1.
0 1 2015/8/3
P1006BTF / P1006BTFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX...
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