MOSFET - UNIKC
Description
P0303BKA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.
5mΩ @VGS = 10V
ID 89A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
89 56 180
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
19 12
Avalanche Current
IAS 59
Avalanche Energy
L = 0.
1mH
EAS
174
TC = 25 °C
48
Power Dissipation
TC = 100 °C TA = 25 °C
PD
19 2.
1
TA = 70 °C
1.
4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
Ver 1.
0
1 2012/5/16
P0303BKA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case Junction-to-Ambient2
Steady-State Steady-State
RqJC RqJA
2.
6 °C / W
57
1Pulse width limited by maximum junction temperature.
2The value of ...
Similar Datasheet
