Advanced N-Ch Power MOSFET
Description
SMK0160IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS=600V (Min.) Low gate charge: Qg=3.9nC (Typ.) Low drain-source On resistance: RDS(on)=11.5Ω (Max.) 100% avalanche tested
RoHS compliant device
Ordering Information
Part Number SMK0160IS
Marking SMK0160
Package
I-PAK (Short Lead)
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