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FDN86265P

MOSFET

Description

FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features General Description Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg This product is optimised for fast ...

Fairchild Semiconductor

FDN86265P PDF File

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