MOSFET
Description
FDMC8032L Dual N-Channel PowerTrench® MOSFET
October 2013
FDMC8032L
Dual N-Channel PowerTrench® MOSFET
40 V, 7 A, 20 mΩ
Features
General Description
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mΩ at VGS = 4.
5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested Termination is Lead-free and RoHS Compliant
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package.
The package is enhanced for exceptional thermal performance.
Applications
Battery Protection Load Switching
Point of Load
Pin 1
Pin 1 G1 S1 S1 S1 D1 D2
G2 S2 S2 S2 Power 33
G1 S1 S1 S1
G2 S2 S2 S2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power...
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