MOSFET
Description
FDMD82100 Dual N-Channel PowerTrench® MOSFET
June 2014
FDMD82100
Dual N-Channel Power Trench® MOSFET
100 V, 25 A, 19 mΩ
Features
General Description
Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layout in primary side of bridge topology
Termination is Lead-free and RoHS Compliant 10...
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