N-Channel Power MOSFET
Description
STD11N60DM2
Datasheet
N-channel 600 V, 370 mΩ typ.
, 10 A MDmesh DM2 Power MOSFET in a DPAK package
TAB
23 1 DPAK
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code
VDS @ TJmax
RDS(on)max.
ID
STD11N60DM2
650 V
420 mΩ
10 A
• Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected
PTOT 110 W
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status STD11N60DM2
Product summary
Order code
STD11N60DM2
Marking
11N60DM2
Package
DPAK
Packing
Tape and reel
DS11674 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
Tj
Operating junction temperature range
1.
Pulse width is limited by safe operating area.
2.
ISD ≤ 10 A, di/dt=900 A/μs; VDS(peak) < V(BR)DSS,VDD = 400 V 3.
VDS ≤ 480 V.
Table 2.
Thermal data
Symbol
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA (1)
Thermal resistance, junction-to-ambient
1.
When mounted on 1 inch² FR-4 board, 2oz Cu.
Table 3.
Avalanche characteristics
Symbol
Parameter
IAR (1)
Avalanche current, repetitive or not repetitive
EAS (2)
Single pulse avalanche energy
1.
pulse width limited by Tjmax 2.
starting Tj = 25 °C, ID = IAR, VDD = 50 ...
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