P-Channel Power MOSFET
Description
P-Channel Power MOSFE
Production specification
SI2305DS
DESCRIPTION
SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This hight-density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits,and low in-line power loss are required.
The product is in a very small outline surface mount package.
FEATURE
20V/3.
3A, RDS(ON) = 68mΩ @VGS = 4.
5V
20V/2.
2A, RDS(ON) = 89mΩ @VGS = 2.
5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum
DC current capability SOT-23 package design
PIN CONFIGURATION SOT-23 3 D
GS 12
1.
Gate 2.
Source 3.
Drain
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current P...
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