P-Channel MOSFET
Description
SHENZHEN YANGJING MICROELECTRONICS CO.
,LTD
SOT-23 Plastic-Encapsulate MOSFETS
SI2301 P-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: A11
SHB
SOT-23
1.
GATE 2.
SOURCE 3.
DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature
VDS VGS ID IDM IS PD R θJA TJ Tstg
Value
-20 ±8 -2.
3 -10 -0.
72 0.
35 357 150 -55 ~+150
Unit V
A
W ℃/W
℃
YANGJING MICROELECTRONICS
www.
szyangjing.
com
4007-888-606 2
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current
Drain-source on-state resistance a
Forward transcond...
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