HCS60R180E Super Junction MOSFET
Mar 2016
HCS60R180E
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 650 20 0.18 22
Unit V A ȍ nC
Application
Telecom Power equipm...
