GaN HEMT - Cree
Description
CGHV14800
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.
2 - 1.
4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars.
The GaN HEMT typically operates at 50 V, typically deliverying >65% drain efficiency.
The package options are ceramic/metal flange package.
Package PN:
CTGypHeV: 1444800101F7
Typical Performance Over 1.
2-1.
4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.
2 GHz
1.
25 GHz
1.
3 GHz
1.
35 GHz
Output Power
900 900 870 870
Power Gain
14.
5
14.
5
14.
0
14.
0
Drain Efficiency
68 67 67 63
Note: Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty cycle...
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