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MRF581AG
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Description
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTOR
S MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, ampli...
Microsemi
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