Power MOSFET
Description
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SiHG21N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
84 14 24 Single
TO-247AC
0.
176 D
S
D G
G
S N-Channel MOSFET
FEATURES • Fast body diode MOSFET using E series
technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS • Telecommunications
- Server and telecom power supplies • Lighting
- High intensity discharge (HID) - Light emitting diodes (LEDs) • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power suppliers (SMPS) • Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
TO-247AC SiHG21N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt d
TJ = 125 °C
EAS PD TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a.
Repetitive rating; pulse width limited by maximum junction temperature.
b.
VDD = 50 V, starting TJ = 25 °C, L = 28.
2 mH, Rg = 25 , IAS = 5.
1 A.
c.
1.
6 mm from case.
d.
ISD ID, dI/dt = 900 A/μs, starting TJ = 25 °C.
LIMIT 600 ± 30 21 14 53 1.
8 367 227
-55 to +150 70 50 300
UNIT V
A
W/°C mJ W °C V/ns °C
S17-0299-Rev.
B, 27-Feb...
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