Memory FRAM
Description
FUJITSU SEMICONDUCTOR DATA SHEET
Memory FRAM
4 M Bit (256 K × 16)
MB85R4002A
DS501-00006-3v1-E
■ DESCRIPTIONS
The MB85R4002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.
The MB85R4002A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R4002A can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R4002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration
: 262,144 words × 16 bits
• LB and UB data byte control
• Read/write endurance
: 1010 times / byte
• Data retention
: 10 years ( + 55 °C), 55 years ( + 35 °C)
• Operating power supply voltage
: 3.
0 V to 3.
6 V
• L...
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