Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD3055
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
6
A
Collector Power Dissipation@TC=25℃
20
PC
W
Collector Power Dissipation@Ta=25℃ 1.
75
Tj
Junction Tmperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
6.
25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.
4 ℃/W
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD3055
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.
4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.
3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
ICBO
Collector Cutoff Current
VCB= 100V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
Pulse Test: PW≤300μs, Duty Cycle≤2.
0%
IC= 0.
5A ; VCE= 10V;ftest= 1.
0MHz
MIN MAX UNIT
60
V
1.
1
V
8.
0
V
1.
8
V
50
uA
0.
02
mA
0.
5
mA
20
100
5
2.
0
MHz
isc website：www.
iscsemi.
com
2 isc & iscsemi is registered trademark
isc Silicon NPN Power...
Similar Datasheet
