Silicon NPN Power Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·High DC Current Gain-
: hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier
applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃...
Inchange Semiconductor
MJD6039 PDF File
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