Silicon PNP Power Transistors
Description
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.
5V(Max.
)@ IC= -5A ·DC Current Gain-
: hFE= 20-100 @IC= -1A
isc Product Specification
2N4902X
APPLICATIONS ·Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-5 A
ICM Collector Current-Peak
-10 A
IB Base Current-Continuous
-1 A
PC
Collector Power Dissipation@TC=25℃
87.
5
W
TJ Junction Temperature Tstg Storage Temperature
200 ℃ -65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 2.
0 ℃/W
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N4902X
ELECTRICA...
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