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STP6623

Stanson Technology

MOSFET

STP6623
STP6623

PDF File STP6623 PDF File

Description
SCRIPTION STP6623 P Channel Enhancement Mode MOSFET -18.
0A STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8 FEATURE -60V/-10.
0A, RDS(ON) = 23mΩ (Typ.
) @VGS =-10V -60V/-8.
0A, RDS(ON) = 28mΩ @VGS = -4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com .
STP6623 2010.
V1 STP6623 P Channel Enhancement Mode MOSFET -18.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VDSS VGSS ID IDM IS PD TJ Storgae Temperature Range Thermal Resistance-Junction to Ambient TSTG RθJA Typical -60 ±20 -18.
0 -11.
0 -50 -4.
3 3.
1 2.
0 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com .
STP6623 2010.
V1 STP6623 P Channel Enhancement Mode MOSFET -18.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA -60 VGS(th) VDS=VGS,ID=-250 uA -0.
8 V -2.
5 V Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance IGSS IDSS ID(on) RDS(on) gfs VDS=0V,VGS=±20V VDS=-48V,VGS=0V VDS=-48V,VGS=0V TJ=85℃ VD...


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