N-Channel MOSFET - Micross Components
Description
ICE60N600D
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
7A 600V 0.
52Ω 21nC
Pin Description:
TO-252
G
Max Min Typ Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
7 21 170 3.
5 50
±20 ±30
65
-55 to +150 60
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 3.
5A Limited by Tjmax VDS = 480V, ID = 7A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 3 & 3.
5 screws
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 1.
9 - - 68 - - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 -
-
2.
1 3 3.
9
- 0.
1 1
- - 100
IGSS RDS(on)
Gate Source Leakage Current Drain to Source On-State Resistance
- - 100 - 0.
52 0.
60 - 1.
3 -
RGS Gate Resistance
-6-
°C/W °C
Leaded 1.
6mm (0.
063in.
) from Case for 10s
V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 3.
5A, Tj = 25°C
VGS = 10V, ID = 3.
5A, Tj = 150°C Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1...
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