RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Description
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFR91 BFR91G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
• High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA • Low Noise Figure – NF = 1.
9 dB (typ) @ f = 0.
5 GHz, 2.
5 dB (typ) @ 1GHz • High Power Gain – Gmax = 16 dB (typ) @ f = 0.
5 GHz, 10.
9dB (typ) @ 1GHz
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers.
Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TA = 60ºC Derate above 60ºC
Storage Temperature
RθJA
Total Device Dissipation @ TA = 60ºC Derate above 60ºC
Value 12 15 3.
0 35
180 2.
0
-65 to +150
500
Unit Vdc Vdc Vdc mA
mWatts mW/ ºC
ºC
ºC/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.
ADVANCEDPOWER.
COM or contact our factory direct.
Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO
BVCB0
BVEBO
ICBO
(on)
HFE
Test Conditions
Collector-Emitter Breakdown Voltage (IC = 1.
0 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 0.
1 mAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 0.
1 mAdc, IC = 0)
Collector Cutoff Current (VCB = 5.
0 Vdc, VBE = 0 Vdc)
DC Current Gain (IC = 30 mAdc, VCE = 5.
0 Vdc)
DYNAMIC
Symbol Ftau
CCB
Test Conditions
Current-Gain – Bandwidth Product (IC = 30 mA, VCE = 5.
0 Vdc, f = 0.
5 GHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.
0 MHz)
BFR91 BFR91G
Min.
12 15 3.
0 -
Value Typ.
-
-
-
-
Max.
50
Unit Vdc Vdc Vdc nA
25 - 250
-
Min.
-
Value Typ.
5.
0
0.
7
Max.
-
1.
0
Unit GHz pF
Advanced Power Technology reserves the right to change, with...
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