N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS
60V
RDS(on) 20mohm(typ.)
ID 50A
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
TO220
SSPL6022
Marking and pin Assign...
