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1SS307E

Part Number	1SS307E
Manufacturer	Toshiba
Description	Diode
Published	Sep 18, 2016
Detailed Description	Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low ...
Datasheet	1SS307E PDF File

Overview

Switching Diodes Silicon Epitaxial Planar 1SS307E 1.
Applications • General-Purpose Rectifiers 2.
Features (1) Very low reverse current.
: IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales.
3.
Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.
5.
0 1SS307E 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current IFM 300 mA Average rectified current IO 100 Power...

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