DatasheetsPDF.com

1SS302A

Part Number	1SS302A
Manufacturer	Toshiba
Description	Silicon Epitaxial Planar Switching Diodes
Published	Sep 18, 2016
Detailed Description	Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 ...
Datasheet	1SS302A PDF File

Overview

Switching Diodes Silicon Epitaxial Planar 1SS302A 1.
Applications • Ultra-High-Speed Switching 2.
Features (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.
6 ns (typ.
) Note 1: For detail information, please contact our sales.
3.
Packaging and Internal Circuit USM 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-12 2022-11-22 Rev.
5.
0 1SS302A 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current IFM (Note 1) 300 m...

Similar Datasheet

1SS300 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS301 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS301 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS302 Diode - Toshiba Semiconductor
1SS302 ULTRA HIGH SPEED SWITCHING APPLICATIONS - Guangdong Kexin Industrial
1SS302A Silicon Epitaxial Planar Switching Diodes - Toshiba
1SS306 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS307 Diode - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)