2SD2057
Description
Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
Unit: mm
s Features
q Incorporating a built-in damper diode q Reduction of a parts count and simplification of a circuit are al-
lowed q High breakdown voltage with high reliability q High-speed switching q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCES VEBO ICP IC IB
PC
1500 1500
7 20 5 4 100 3
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A A
W
˚C ˚C
3.
22.
3 15.
0±0.
2 0.
7
15.
0±0.
3 11.
0±0.
2
5.
0±0.
2 3.
2
φ3.
2±0.
1
21.
0±0.
5
2.
0±0.
2 1.
1±0.
1
2.
0±0.
1 0.
6±0.
2
Solder Dip
16.
2±0.
5
5.
45±0.
3 10.
9±0.
5
123
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(b)
Internal Connection
C B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Collector cutoff current
ICBO
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time (L-load) Fall time (L-load) Diode forward voltage
VEBO hFE VCE(sat) VBE(sat) fT tstg tf VF
Conditions
min typ max Unit
VCB = 1000V, IE = 0 VCB = 1500V, IE = 0
30 µA 300 µA
IE = 500mA, IC = 0
7
V
VCE = 10V, IC = 5A
4.
5 15
IC = 5A, IBw= 1.
2wA w.
DataShee8t4UV .
com
IC = 5A, IB = 1.
2A
1.
5 V
VCE = 10V, IC = 1A, f = 0.
5MHz IC = 5A, IB1 = 1.
2A, IB2 = –1.
2A, Lleak = 5µH
2 MHz 12 µs 0.
8 µs
IC = –6A, IB = 0
–2.
3 V
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Collector power dissipation PC (W)
Power Transistors
PC — Ta
120 (1) TC=Ta (2) With a 100 × 100 × 2mm
100 Al heat sink (3) Without heat sink
(1) (PC=3W) 80
60
40
20 (2) (3)
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Collect...
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