N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec.
No.
: C868J3 Issued Date : 2016.
06.
06 Revised Date : Page No.
: 1/9
N-Channel Enhancement Mode Power MOSFET
MTB150N10J3
BVDSS ID @ VGS=10V, TA=25°C
100V 2.
3A
ID @ VGS=10V, TC=25°C
7A
RDSON(TYP)
VGS=10V, ID=10A 163 mΩ VGS=4.
5V, ID=10A 178 mΩ
Features
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB150N10J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB150N10J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTB150N10J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current
Avalanche Energy @ L=1mH, ID=7A, VDD=50V Repetitive Avalanche Energy @ L=0.
05mH
Total Power Dissipation
Operating Junction and Storage Temperature Range
TC=25℃ TC=100℃ TA=25℃ TA=70℃
Symbol VDS VGS
ID
IDM
EAS EAR
PD
PDSM Tj, Tstg
Spec.
No.
: C868J3 Issued Date : 2016.
06.
06 Revised Date : Page No.
: 2/9
Limits
100 ±20
7 4.
4 2.
3 1.
8 28 *1
24.
5 *3 2.
5
25 16 2.
5 *2 1.
6 *2
-55~+150
Unit V
A
mJ W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
RθJC RθJA
5 50 *2
°C/W
Note : 1.
Pulse width limited by maximum junction temperature.
2.
Surface mounted on a 1 in² pad of 2oz copper.
In practice Rth,j-a will be determined by custom...
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