P-Channel Enhancement Mode MOSFET
Description
CEM9435
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -5A, RDS(ON) = 60mΩ @VGS = -10V.
RDS(ON) = 95mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -5 IDM -20
Maximum Power Dissipation
PD 2.
5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
Details are subject to change without notice .
1
Rev 2.
2012.
May http://www.
cetsemi.
com
CEM9435
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c
BVDSS IDSS IGSSF
IGSSR
VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
-30
-1 100 -100
V µA nA nA
Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d
VGS(th) RDS(on)
VGS = VDS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.
5V, ID = -4A
-1
-3 V 50 60 mΩ 70 95 mΩ
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d
Ciss Coss Crss
VDS = -15V, VGS = 0V, f = 1.
0 MHz
540 95 65
pF pF pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω
Turn-On Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = -15V, ID = -5A, VGS = -10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns 3 6 ns 28 56 ns 4 8 ns 10 13 ...
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