FJAF6815
Description
FJAF6815
FJAF6815
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V • Low Saturation Voltage : VCE(sat) = 3V (Max.
) • For Color Monitor
1 TO-3PF 1.
Base 2.
Collector 3.
Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating 1500 750
6 15 25 60 150 -55 ~ 150
Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1 hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=10A IC=10A, IB=2.
5A IC=10A, IB=2.
5A VCC=200V, IC=8A, RL=25Ω IB1=1.
6A, IB2= - 3.
2A
1500 750
6 10 5
1 mA 10 µA 1 mA
V V V
8 3V 1.
5 V 3 µs 0.
2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
Max 2.
08
Units °C/W
©2001 Fairchild Semiconductor Corporation
Rev.
A, May 2001
Typical Characteristics
IC [A], COLLECTOR CURRENT
12 IB=2.
0A
10
8
6 IB=0.
6A
4 IB=0.
4A IB=0.
2A
2
0 0 2 4 6 8 10 12
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1.
Static Characteristics
10
IC = 3 IB
1
Ta = 125oC Ta = 25oC Ta = - 25oC
VCE(sat) [V], SATURATION VOLTAGE
0.
1
0.
01 0.
1
1 10
IC [A],...
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