Silicon Super Fast Recovery Diode
Description
Silicon Super Fast Recovery Diode
Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive
MURF30005 thru MURF30020R
VRRM = 50 V - 200 V IF(AV) = 300 A
TO-244 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURF30005(R) MURF30010(R) MURF30020(R)
Unit
Repetitive peak reverse voltage
RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
50
35 50 -55 to 150 -55 to 150
100
70 100 -55 to 150 -55 to 150
200
140 200 -55 to 150 -55 to 150
V
V V °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURF30005(R)
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward voltage (per leg)
Maximum reverse current at rated DC blocking voltage (per leg)
Maximum reverse recovery time (per leg)
Thermal characteristics Maximum thermal resistance, junction - case (per leg)
IF(AV)
TC = 140 °C
IFSM tp = 8.
3 ms, half sine
VF IFM = 150 A, Tj = 25 °C
Tj = 25 °C IR Tj = 125 °C
Trr
IF=0.
5 A, IR=1.
0 A, IRR= 0.
25 A
RΘJC
300 2750 1.
0
25 3 100
0.
40
MURF30010(R) 300 2750 1.
0 25 3 100
0.
40
MURF30020(R) Unit
300 A
2750
A
1.
0 V 25 μA 3 mA 100 nS
0.
40 °C/W
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MURF30005 thru MURF30020R
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2
MURF30005 thru MURF30020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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