600V N-Channel MOSFET
Description
HFD2N65F_HFU2N65F
July 2015
HFD2N65F / HFU2N65F
600V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 2 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ.) Extended Safe Operating Ar...
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