600V N-Channel MOSFET
Description
HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.
7 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD1N60F
1
2 3
HFU1N60F
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25) - Derate above 25
600 1.
0 0.
6 4.
0 ρ30 33 1.
0 2.
8 2.
5 28 0.
22
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Units V A A A V mJ A mJ W W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
----
Max.
4.
53 50 110
Units /W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͦ͑͢͡
HFD1N60F_HFU1N60F
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 0.
5 A
2.
0 --
Off Characteristics
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 VGS = ρ30 V, VDS = 0 V
600 ----
Dynamic Characteristics
Ciss...
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