Silicon PNP Power Transistor
Description
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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Inchange Semiconductor
BDT60 PDF File
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