8M (512K x 16) Static RAM - Cypress Semiconductor
Description
CY62157DV20 MoBL2
Features
• Very high speed: 55 ns • Wide voltage range: 1.
65V to 2.
2V • Pin compatible with CY62157CV18 • Ultra low active power
— Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax • Ultra low standby power • Easy memory expansion with CE1, CE2 and OE features • Automatic power-down when deselected • CMOS for optimum speed/power • Packages offered in a 48-ball FBGA
Functional Description[1]
The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits.
This device features advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones.
The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling.
The device can also be put into standby mode when
Logic Block Diagram
8M (512K x 16) Static RAM
deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH.
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW, outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and WE LOW).
Writing to the device is accomplished by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and Write Enable (WE) input LOW.
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18).
If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18).
Reading from the device is accomplished by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and Output Enable (OE) LOW while forcing the Wri...
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