N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec.
No.
: C393V8 Issued Date : 2016.
01.
04 Revised Date : Page No.
: 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTN2310AV8
BVDSS ID @ TC=25°C, VGS=10V
ID @ TA=25°C, VGS=10V
RDSON(TYP)
VGS=10V, ID=3A VGS=4.
5V, ID=2A
Features
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package
60V 14A 6A 29mΩ 33mΩ
Equivalent Circuit
MTN2310AV8
Outline
Pin 1
DFN3×3
G：Gate D：Drain S：Source
Ordering Information
Device MTN2310AV8-0-T6-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTN2310AV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.
1mH, ID=14A, RG=25Ω
Repetitive Avalanche Energy @ L=0.
05mH
Total Power Dissipation
TC=25℃ TA=25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM IAS EAS EAR PD
Tj, Tstg
Spec.
No.
: C393V8 Issued Date : 2016.
01.
04 Revised Date : Page No.
: 2/9
Limits
60 ±20 14
9 6 4.
8 30 *1 14 9.
8 2 14 2.
3 *2
-55~+150
Unit V
A
mJ W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
RƟJC RƟJA
9 50 *2
°C/W
Note : 1.
Pulse width limited by maximum junction temperature.
2.
Surface mounted on a 1 in² pad of 2oz copper.
In practice Rth,j-a will be determined by customer’s PCB ch...
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