N-channel MOSFET
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery
TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G
VDSS = 660 V @Tjmax ID = 9A RDS(ON) = 1.
0 W(max) @ VGS= 10 V
D
G
Device TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G
Package TO-220 / TO-220F TO-220 / TO-220F
S Marking TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
July 2010 : Rev0
Symbol RqJC RqJA
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TMP9N60(G)
TMPF9N60(G)
600 ±30
9 9* 5 5*
44 44*
662 9
15.
8 158 51.
4
1.
26 0.
41
4.
5 -55~150
300
TMP9N60(G) 0.
79 62.
5
TMPF9N60(G) 2.
43 62.
5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/5
TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transco...
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