Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S19TU
MT3S19TU
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure : NF = 1.
5 dB (typ.
) (@ f = 1 GHz) • High Gain : |S21e|2=13 dB (typ.
) (@ f = 1 GHz)
2.
1±0.
1 1.
7±0.
1
Unit: mm
0.
3-+00.
.
015
1 23
2.
0±0.
1 0.
65±0.
05
0.
166±0.
05
0.
7±0.
05
Marking
3
T6
1.
BASE 2.
EMITTER 3.
COLLECTOR
12
Absolute Maximum Ratings (Ta = 25°C)
UFM
JEDEC
-
JEITA
-
TOSHIBA
2-2U1B
Weight: 6.
6 mg (typ.
)
Characteristics
Symbol
Rating
Unit
Collector-basevoltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC(Note 1) Tj Tstg
12 6 2 80 10 900 150 −55 to 150
V V V mA mA mW °C °C
Note 1: The device is mounted on a ceramic board (25.
4 mm x 25.
4 mm x 0.
8 mm (t))
Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-03-31
Microwave Characteristics (Ta = 25°C)
MT3S19TU
Characteristics
Symbol
Test Condition
Transition frequency
Insertion gain
Noise figure 3rd order intermodulation distortion output intercept point
fT |S21e|2(1) |S21e|2(2)
NF
OIP3
VCE=5 V, IC=50 mA VCE=5 V, IC=50 mA, f=500 MHz VCE=5 V, IC=50 mA, f=1 GHz VCE=5 V, IC=20 mA, f=1 GHz VCE=5 V, IC=50 mA, f=500 MHz, ⊿f=1 MHz
Min Typ.
Max Unit 9 11 ⎯ GHz － 19 ⎯ dB 11 13 ⎯ ⎯ 1.
5 1.
9 dB
29.
5 33.
5 ⎯ dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
...
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