Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S16T
VHF~UHF Band Oscillator and Amplifier Applications
• fT is high and current dependability is excellent.
• The Cre curve is flat.
:|S21e|2 = 4.
5 dB (@ 2 V, 10 mA, 1 GHz) :NF = 2.
4 dB (@ 2 V, 10 mA, 1 GHz)
MT3S16T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 10 V
Collector-emitter voltage
VCEO 5 V
Emitter-base voltage
VEBO 2 V
Collector current
IC 60 mA
Base current Collector power dissipation
IB 10 mW PC 100 mW
TESM
1.
Base 2.
Emitter 3.
Collector
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in
JEITA TOSHIBA
― 2-1B1A
temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 0.
0022g (typ.
)
operating temperature/current/voltage, etc.
) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test
report and estimated failure rate, etc).
Marking
3
T4
12
1 2007-11-01
Microwave Characteristics (Ta = 25°C)
Characteristic Transition frequency Insertion gain Noise figure
Symbol
Condition
fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2)
NF
VCE = 3 V, IC = 10 mA VCE = 2 V, IC = 10 mA, f = 1 GHz VCE = 3 V, IC = 30 mA, f = 1 GHz VCE = 2 V, IC = 5 mA, f = 1 GHz
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cutoff current Emitter cutoff current DC current gain Reverse-transfer capacitance
ICBO IEBO hFE Cre
VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz (Note)
Note: Cre is measured with a three-terminal method using a capacitance brid...
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