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MT3S12T

Toshiba Semiconductor

Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor


MT3S12T
MT3S12T

PDF File MT3S12T PDF File



Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • Superior performance in oscillator applications.
• Superior noise characteristics : NF = 1.
7 dB, |S21e|2 = 4.
5 dB (f = 2 GHz) MT3S12T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 13 6 1 40 10 100 125 −55~125 Unit V V V mA mW mW °C °C TESM 1.
Base 2.
Emitter 3.
Collector JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.
0022g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Marking 3 TJ 12 1 2007-11-01 Microwave Characteristics (Ta = 25°C) Characteristic Transition frequency Insertion gain Noise figure Symbol Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF (1) VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz Electrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance ICBO IEBO hFE Cre VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz(Note) Note: Cre is measured with a three-terminal method using a capacitance bridge.
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