Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S12FS
VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications
MT3S12FS
Unit : mm
0.
2±0.
05
0.
6±0.
05 0.
35±0.
05
0.
15±0.
05
• Superior performance in oscillator applications • Superior noise characteristics
:NF = 1.
7 dB, |S21e|2 = 4.
5 dB (f =2GHz)
1
3
2 0.
8±0.
05 1.
0±0.
05
0.
1±0.
05
+0.
02 -0.
04
0.
48
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC(Note) Tj Tstg
Rating
13 6 1.
5 40 10 85 125 −55~125
Unit
V V V mA mW mW °C °C
0.
1±0.
05
1.
BASE 2.
EMITTER 3.
COLLECOTR fSM
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.
0006g (typ.
)
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note: 10 mm2 × 1.
0 mm (t), mounted on a glass-epoxy printed circuit board.
Marking
2
3 09 1
1 2007-11-01
Microwave Characteristics (Ta = 25°C)
Characteristic Transition frequency Insertion gain Noise figure
Symbol
Condition
fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2)
NF
VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance
ICBO IEBO hFE ...
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