Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
Description
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113P
MT3S113P
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
• Low Noise Figure:NF=1.
15dB(Typ.
) (@ f=1GHz) • High Gain:|S21e|2=10.
5dB(Typ.
) (@ f=1GHz)
Marking
R7
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Pw-Mini
JEDEC
-
JEITA
SC-62
TOSHIBA
2-5K1A
Weight : 0.
05 g ( typ.
)
Collector-emitter voltage
VCES
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Base current
IB
Collector power dissipation
PC(Note1)
Junction temperature
Tj
Storage temperature range
Tstg
Note1:The device is mounted on a ceramic board
13 V
5.
3 V
0.
6 V
100 mA
10 mA
1.
6 W
150 °C
−55 to 150
°C
(25.
4 mm x 25.
4 mm x 0.
8 mm (t))
Note2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2009-12-01
Microwave Characteristics (Ta = 25°C)
MT3S113P
Characteristics
Symbol
Test Condition
Transition frequency Insertion gain
Noise figure
3rd order intermodulation distortion output intercept point
fT |S21e|2(1) |S21e|2(2)
NF(1) NF(2)
OIP3
VCE=5V,IC=50mA VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz VCE=5V,IC=50mA,f=1GHz VCE=5V,IC=50mA,f=500MHz, ⊿f=1MHz
Min Typ Max Unit
5.
5 7.
7
⎯ GHz
⎯ 16 ⎯ dB
8.
5 10.
5 ⎯
dB
⎯ 0.
95 ⎯
dB
⎯ 1.
15 1.
45 dB
32.
5 36.
7 ⎯ dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ ...
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