Silicon-Germanium NPN Epitaxial Planar Type Transistor
Description
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113
MT3S113
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz)
Marking
R7
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbo...
Toshiba Semiconductor
MT3S113 PDF File
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