Silicon Diffused Type Zener Diode - Toshiba Semiconductor
Description
○ Surge absorber
CMZ12 to CMZ51
TOSHIBA Zener Diode Silicon Diffused Type
CMZ12 to CMZ51
Unit: mm
• Average power dissipation : P = 2 W
• Zener voltage
: VZ = 12 to 51 V
• Suitable for compact assembly due to small surface mount package “M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Power dissipation
Symbol Rating Unit P 2 (Note 1) W
1.
Anode 2.
Cathode
Junction temperature
Tj −40 to 150 °C
Storage temperature range Tstg −40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size
: 50 mm × 50 mm
Land Pattern size : 2 mm × 2 mm
Board thickness : 0.
64 mm
JEDEC JEITA TOSHIBA Weight: 0.
023 g (typ.
)
― ― 3-4E1S
Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Land Pattern Dimensions (for reference only)
Unit: mm
2.
1
1.
4 3.
0
1.
4
1
Start of commercial production
2002-10
2015-05-15
CMZ12 to CMZ51
Electrical Characteristics (Ta = 25°C)
Type
Zener Voltage Vz (V)
Zener Impedance rd (Ω)
Temperature Coefficient Of Zener
Measure-
Measure- αT (mV/°C)
ment
ment
Min Typ.
Max Current Max Current Typ.
Max
IZ (mA)
IZ (mA)
CMZ12 10.
8 12 13.
2
10
30
10
8 13
CMZ13 11.
7 13 14.
3
10
30
10
9 14
CMZ15 13.
5 15 16.
5
10
30
10
11 17
CMZ16 14.
4 16 17.
6
10
30
10
12 19
CMZ18 16.
2 18 19.
8
10
30
10
14 23
CMZ20 18.
0 20 22.
0
10
30
10
16 26
CMZ24 21.
6 24 26.
4
10
30
10
20 32
CMZ27 24.
3 27 29.
7
10
30
10
23 36
CMZ30 27.
0 30 33.
0
10...
Similar Datasheet
