Silicon Diffused Type Zener Diode - Toshiba Semiconductor
Description
TOSHIBA Zener Diode Silicon Diffused Type
CMZ22, CMZ53
CMZ22, CMZ53
Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors
Unit: mm
• Average power dissipation : P = 2 W
• Zener voltage
: VZ = 22 ,53 V
• Suitable for compact assembly due to small surface-mount package “M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Power dissipation
Symbol Rating Unit P 2 (Note 1) W
1.
Anode 2.
Cathode
Junction temperature
Tj −40 to 150 °C
Storage temperature range Tstg −40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size
: 50 mm × 50 mm
Land pattern size : 2 mm × 2 mm
Board thickness : 0.
64 mm
JEDEC JEITA TOSHIBA Weight: 0.
023 g (typ.
)
― ― 3-4E1S
Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Land Pattern Dimensions (for reference only)
Unit: mm
2.
1
1.
4 3.
0
1.
4
1
Start of commercial production
2002-10
2015-05-15
CMZ22, CMZ53
Electrical Characteristics (Ta = 25°C)
Type
Zener Voltage Vz (V)
Zener Impedance rd (Ω)
Temperature Coefficient Of Zener
Measure-
Measure- αT (mV/°C)
ment
ment
Min Typ.
Max Current Max Current Typ.
Max
IZ (mA)
IZ (mA)
CMZ22 19.
8 22 24.
2
10
30
10
18 28
CMZ53 47.
7 53 58.
3
5
85
5
49 77
Forward Voltage VF (V)
Measurement
Max Current IF (A)
1.
2 0.
2
1.
2 0.
2
Reverse Current IR (μA)
Measurement
Max Voltage VR (V)
10 16
10 42.
4
Marking
Abbreviation Code...
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