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A1162

Toshiba Semiconductor
Part Number A1162
Manufacturer Toshiba Semiconductor
Description 2SA1162
Published May 23, 2016
Detailed Description 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier ...
Datasheet PDF File A1162 PDF File

A1162
A1162

Overview
2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.
), 10dB (max) • Complementary to 2SC2712 • Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −150 mA Base current IB −30 mA Collector power dissipation PC 150 mW Junction temperature ...


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