Schottky Barrier Diode - Toshiba
Description
TOSHIBA Schottky Barrier Diode
CRS12
CRS12
Switching Mode Power Supply Applications (Output voltage: ≤12 V) DC/DC Converter Applications
• Forward voltage: VFM = 0.
58 V (max) • Average forward current: IF (AV) = 1.
0 A • Repetitive peak reverse voltage: VRRM = 60 V • Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage Average forward current Non-repetitive peak surge current Junction temperature Storage temperature range
VRRM IF (AV) IFSM
Tj Tstg
60 1.
0 (Note 1) 20 (50 Hz) −40~150 −40~150
V A A °C °C
Note 1: Note 2:
Ta = 73°C Device mounted on a ceramic board
JEDEC
―
Board size: 50 mm × 50 mm Soldering size: 2 mm × 2 mm
JEITA
―
Board thickness: 0.
64 t Rectangular waveform (α = 180°), VR = 30 V
Using continuously under heavy loads (e.
g.
the application of
TOSHIBA
3-2A1A
Weight: 0.
013 g (typ.
)
high temperature/current/voltage and the significant change in
temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage Peak repetitive reverse current Junction capacitance
Thermal resistance (junction to ambient)
Thermal resistance (junction to lead)
Symbol VFM (1) VFM (2) IRRM (1) IRRM (2)
Cj
Rth (j-a)
Rth (j-ℓ)
Test Condition
IFM = 0.
7 A (pulse test) IFM = 1.
0 A (pulse test) VRRM = 5 V (pulse test) VRRM = 60 V (pulse test) VR = 10 V, f = 1.
0 MHz Device mounted on a ceramic board (board size: 50 mm × 50 mm) (solde...
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