Schottky Barrier Diode - Toshiba
Description
Schottky Barrier Diode
CRS10I30C
1.
Applications
• Secondary Rectification in Switching Regulators • Reverse-Current Protection in Mobile Devices
2.
Features
(1) Peak forward voltage: VFM = 0.
36 V (max) @IFM = 1 A (2) Average forward current: IF(AV) = 1 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: S-FLATTM
3.
Packaging and Internal Circuit
CRS10I30C
1: Anode 2: Cathode
3-2A1S
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage
VRRM
30 V
Average forward current
IF(AV) (Note 1)
1
A
Non-repetitive peak forward surge current
IFSM (Note 2)
30
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Tℓ = 124 , square wave (α = 180°), VR = 15 V Note 2: f = 50 Hz, half-sine wave
Start of commercial production
2010-10
1 2014-02-21 Rev.
2.
0
5.
Thermal Characteristics
CRS10I30C
Characteristics Thermal resistance (junction-to-ambient)
Symbol Rth(j-a)
Thermal resistance (junction-to-lead)
Rth(j-ℓ)
Note
Test Condition
Max
Device mounted on a ceramic board (board size: 50 mm × 50 mm) (soldering land size: 2 mm × 2 mm) (board thickness: 0.
64 mm)
Device mounted on a glass-epoxy board (board size: 50 mm × 50 mm) (soldering land size: 6 mm × 6 mm) (board thickness: 1...
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