SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Description
RB551V-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features • Small surface mounting type • Ultra low VF • High reliability
Applications • High frequency rectification switching regulation
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
SA
Top View Marking Code: "SA" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.
) Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA at IF = 500 mA Reverse Current at VR = 20 V
Note: ESD sensitive product handling required.
Symbol
VRM VR IO IFSM Tj Ts
Value 30 20 0.
5 2 125
- 40 to + 125
Unit V V A A OC OC
Symbol VF IR
Max.
0.
36 0.
47
100
Unit V µA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
RB551V-30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
RB551V-30
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A E bp
c
HE DA
UNIT A bp C D E HE
mm
1.
10 0.
80
0.
40 0.
25
0.
15 1.
80 0.
00 1.
60
1.
35 2.
80 1.
15 2.
30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
...
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