Schottky Barrier Rectifier - Toshiba Semiconductor
Description
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS06
Switching Mode Power Supply Applications Portable Equipment Battery Applications
• Forward voltage: VFM = 0.
36 V (max) • Average forward current: IF (AV) = 1.
0 A • Repetitive peak reverse voltage: VRRM = 20 V • Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
CRS06
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage VRRM 20 V
Average forward current
IF (AV)
1.
0 (Note 1)
A
Peak one cycle surge forward current (non-repetitive)
Junction temperature
IFSM Tj
20 (50 Hz) −40~125
A °C
JEDEC
―
Storage temperature
Tstg
−40~125
°C
JEITA
―
Note 1: Tℓ = 106°C: Rectangular waveform (α = 180°), VR = 15 V Note 2: Using continuously under heavy loads (e.
g.
the application of
TOSHIBA
3-2A1A
Weight: 0.
013 g (typ.
)
high temperature/current/voltage and the significant change in
temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage
Repetitive peak reverse current Junction capacitance Thermal resistance (junction to ambient) Thermal resistance (junction to lead)
Symbol VFM (1) VFM (2) VFM (3) IRRM (1) IRRM (2)
Cj
Rth (j-a)
Rth (j-ℓ)
Test Condition
Min Typ.
Max Unit
IFM = 0.
1 A
IFM = 0.
7 A
IFM = 1.
0 A
VRRM = 5 V
VRRM = 20 V
VR = 10 V, f = 1.
0 MHz
Device mounted on a ceramic board (soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy board (soldering land: 6 mm × 6 mm)
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
⎯
0.
20 0.
3...
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