High Efficiency Rectifier - Toshiba Semiconductor
Description
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CRH01
Switching Mode Power Supply Applications
• Repetitive peak reverse voltage: VRRM = 200 V • Average forward current: IF (AV) = 1.
0 A • Low forward voltage: VFM = 0.
98 V (Max.
) • Very Fast Reverse-Recovery Time: trr = 35 ns (Max.
) • Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
CRH01
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM 200 V
Average forward current
IF(AV) 1.
0 A
Peak one cycle surge forward current (non-repetitive)
Junction temperature
Storage temperature range
IFSM
Tj Tstg
15 (50 Hz)
−40~150 −40~150
A
°C °C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.
g.
the application of high
TOSHIBA
3-2A1A
temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the
Weight: 0.
013 g (typ.
)
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current Reverse recovery time Forward recovery time
Thermal resistance
Symbol
VFM (1) VFM (2) VFM (3) IRRM
trr tfr
Rth (j-a)
Test Condition
IFM = 0.
1 A IFM = 0.
7 A IFM = 1.
0 A VRRM = 200 V IF = 1 A, di/dt = −30 A/μs IF = 1 A Device mounted on a ceramic board (soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy board (soldering land: 6 mm × 6 mm)
Min Typ.
Max Unit
⎯ 0.
71 ⎯ ⎯ 0.
86 ⎯
V
⎯ 0.
90 0.
98
⎯ ⎯ 10 μA
⎯ ⎯ 35 ns
⎯ ⎯ 100 ns
⎯ ⎯ 65
°C/W ⎯ ⎯ 130
Start of commercial production
1999-07 1 20...
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