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SSC8025GS6 Dataheets PDF



Part Number SSC8025GS6
Manufacturers AFSEMI
Logo AFSEMI
Description P-Channel Enhancement Mode MOSFET
Datasheet SSC8025GS6 DatasheetSSC8025GS6 Datasheet (PDF)

SSC8025GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5 ID ESD -4A 3kV  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View D  General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use a.

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SSC8025GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5 ID ESD -4A 3kV  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View D  General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.  Package Information GS ③ ①② SOT23 Unit:mm SSC-4V0 http://www.afsemi.com 1/4 SSC8025GS6  Absolute Maximum Ratings @ TA = 25°C unless otherw ise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current(1) Pow er Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range V DSS V GSS ID PD TJ, TSTG Ratings -20 ±8 -4 -20 450 -55 to +150 Unit V V A mW °C  Electrical Characteristics @ TA = 25°C unless otherw ise noted Parameter(2) Symbol Test Conditions Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curren V(BR)DSS IDSS VGS = 0V, ID = -250uA VDS = -20V, VGS = 0V Gate-Body Leakage Gate Threshold Voltage IGSS VGS(TH) VGS = ±8V, VDS = 0V VDS = VGS, ID = -250uA Static Drain-Source On-Resistance RDS (ON) VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3A VGS = -1.8V, ID = -2A VGS = -1.5V, ID = -1A Forward Transconductance Diode Forw ard Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance GFS VSD CISS COSS CRSS VDS =-5V, ID = -4A VGS = 0V, ISD = 1.6A VDS = -10V, VGS = 0V F = 1.0MHz Total Gate Charge Gate-Source Charge Gate-Drain QG QGS VDS=-10V, ID=-4A, VGS=5V QGD Turn-On Delay Time Turn-Off Delay Time TD(ON) TD(OFF) VGS = -5V, VGS = -10V RL = 1.5R ,RGEN = 3R Min Typ Max Unit -20 -- -- V -- -- -1 uA -- -- ±10 -0.3 -0.55 -1.0 uA V -- 50 63 -- 60 74 mR -- 70 86 -- 96 111 -- 16 -- S 0.7 1.2 V -- 418 -- -- 136 -- pF -- 56 -- -- 9 --- 2.9 -- nC -- 3.6 -- -- -- 18 ns -- -- 70 Notes : 1. Surface Mounted on FR4 Board, t < 10 sec. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% SSC-4V0 http://www.afsemi.com 2/4  Typical Performance Characteristics 25 V =-8V GS V =-4.5V GS 20 V =-2.5V GS V =-2V GS 15 I , Drain Current (A) D 10 V =-1.5V GS 5 0 01234 V , Drain-Source Voltage (V) DS Figure 1. Output Characteristics 5 C, Capacitance (pF) 600 500 400 Ciss Ave(pF) 300 200 Coss Ave(pF) 100 Crss Ave(pF) 0 0 5 10 15 V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance 20 R ,On Resistance (mR) DS(ON) I , Drain current(A) D SSC8025GS6 10 VDS=-5V 8 6 4 150oC 2 25oC 0 0.0 0.4 0.8 1.2 1.6 2.0 V , Gate-to-source Voltage(V) GS Figure 2. Transfer Characteristics 80 70 60 50 40 30 20 10 0 -50 0 50 100 150 Tj, Junction Temperature (oC) Figure 4. On Resistance vs. Temperature 1.0 0.8 0.6 0.4 0.2 0.0 -50 0 50 100 150 Tj, Junction Temperature (oC) Figure 5. Gate Threshold vs. Temperature I , Source Drain Current (A) S 10 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 V , Body Diode Forward Voltage (V) SD Figure 6. Diode Forward Characteristics V , Gate-Source TH Threshold Voltage (V) SSC-4V0 http://www.afsemi.com 3/4 SSC8025GS6 DISCLAIMER AFS EMI RES ERV ES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTI CE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. SPIRIT-S EMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLI CATION OR US E OF ANY PRODUCT OR CIRCUIT DES CRI BED HEREIN; NEITHER DOES IT CONV EY ANY LICI ENCE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THE GRAP HS PROVIDED I N THIS DOCUMENT ARE STATISTICAL S UMMARI ES BAS ED ON A LIMIT ED NUMBER OF SAMPLES AND ARE PROVIDED FOR INFORMATIONAL P URP OSE ONLY. THE PERFORMANCE CHARACTERISTI CS LISTED IN THEM ARE NOT TESTED OR GUARANTEED. IN SOME GRAPHS, THE DATA P RES ENTED MAY BE OUTSIDE THE SP ECIFI ED OPERATING RANGE (E.G,. OUTSIDE SP ECIFI ED P OWER SUPPLY RANGE ) AND THEREFORE OUTSIDE THE WARRANTED RANGE. SSC-4V0 http://www.afsemi.com 4/4 .


KA7522D SSC8025GS6 LQ133K1LA4A


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