Document
SSC8025GS6
P-Channel Enhancement Mode MOSFET with ESD Protection
Features
VDS VGS -20V ±8V
RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5
ID ESD -4A 3kV
Applications
Load Switch
Portable Devices DCDC Conversion
Pin configuration
Top View
D
General Description
This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.
Package Information
GS
③
①②
SOT23 Unit:mm
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SSC8025GS6
Absolute Maximum Ratings @ TA = 25°C unless otherw ise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current(1) Pow er Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature Range
V DSS V GSS
ID
PD TJ, TSTG
Ratings
-20 ±8 -4 -20 450 -55 to +150
Unit
V V
A
mW °C
Electrical Characteristics @ TA = 25°C unless otherw ise noted
Parameter(2)
Symbol
Test Conditions
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curren
V(BR)DSS IDSS
VGS = 0V, ID = -250uA VDS = -20V, VGS = 0V
Gate-Body Leakage Gate Threshold Voltage
IGSS VGS(TH)
VGS = ±8V, VDS = 0V VDS = VGS, ID = -250uA
Static Drain-Source On-Resistance
RDS (ON)
VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3A VGS = -1.8V, ID = -2A VGS = -1.5V, ID = -1A
Forward Transconductance Diode Forw ard Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance
GFS VSD CISS COSS CRSS
VDS =-5V, ID = -4A VGS = 0V, ISD = 1.6A
VDS = -10V, VGS = 0V F = 1.0MHz
Total Gate Charge Gate-Source Charge Gate-Drain
QG
QGS VDS=-10V, ID=-4A, VGS=5V
QGD
Turn-On Delay Time Turn-Off Delay Time
TD(ON) TD(OFF)
VGS = -5V, VGS = -10V RL = 1.5R ,RGEN = 3R
Min Typ Max Unit -20 -- -- V -- -- -1 uA
-- -- ±10 -0.3 -0.55 -1.0
uA V
-- 50 63
-- 60 74 mR
-- 70 86
-- 96 111
-- 16 --
S
0.7 1.2
V
-- 418 --
-- 136 --
pF
-- 56 --
-- 9 --- 2.9 -- nC -- 3.6 --
-- -- 18 ns
-- -- 70
Notes : 1. Surface Mounted on FR4 Board, t < 10 sec. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
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Typical Performance Characteristics
25 V =-8V
GS
V =-4.5V GS
20 V =-2.5V GS V =-2V GS
15
I , Drain Current (A)
D
10 V =-1.5V
GS
5
0 01234 V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
5
C, Capacitance (pF)
600
500
400 Ciss Ave(pF)
300
200 Coss Ave(pF)
100 Crss Ave(pF)
0 0 5 10 15
V , Drain-to-Source Voltage (V) DS Figure 3. Capacitance
20
R ,On Resistance (mR) DS(ON)
I , Drain current(A)
D
SSC8025GS6
10 VDS=-5V
8
6
4 150oC
2 25oC
0 0.0 0.4 0.8 1.2 1.6 2.0
V , Gate-to-source Voltage(V) GS
Figure 2. Transfer Characteristics
80 70 60 50 40 30 20 10
0 -50 0 50 100 150
Tj, Junction Temperature (oC) Figure 4. On Resistance vs. Temperature
1.0
0.8
0.6
0.4
0.2
0.0 -50
0 50 100 150
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold vs. Temperature
I , Source Drain Current (A)
S
10
1
0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V , Body Diode Forward Voltage (V) SD
Figure 6. Diode Forward Characteristics
V , Gate-Source TH
Threshold Voltage (V)
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SSC8025GS6
DISCLAIMER
AFS EMI RES ERV ES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTI CE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. SPIRIT-S EMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLI CATION OR US E OF ANY PRODUCT OR CIRCUIT DES CRI BED HEREIN; NEITHER DOES IT CONV EY ANY LICI ENCE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THE GRAP HS PROVIDED I N THIS DOCUMENT ARE STATISTICAL S UMMARI ES BAS ED ON A LIMIT ED NUMBER OF SAMPLES AND ARE PROVIDED FOR INFORMATIONAL P URP OSE ONLY. THE PERFORMANCE CHARACTERISTI CS LISTED IN THEM ARE NOT TESTED OR GUARANTEED. IN SOME GRAPHS, THE DATA P RES ENTED MAY BE OUTSIDE THE SP ECIFI ED OPERATING RANGE (E.G,. OUTSIDE SP ECIFI ED P OWER SUPPLY RANGE ) AND THEREFORE OUTSIDE THE WARRANTED RANGE.
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