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BD436

SeCoS

PNP General Purpose Transistor

Elektronische Bauelemente BD436 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halog...


SeCoS

BD436

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Elektronische Bauelemente BD436 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High Current Amplifier and Switching Applications TO-126 1Emitter 2Collector 3Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current -Continuous Collector Power Dissipation Maximum Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings -32 -32 -5 -4 1.25 100 150, -55 ~ 150 Unit V V V A W °C / W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector - Base Breakdown Voltage Collector-emitter sustaining voltage 1 Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut-Off Current DC Current Gain 1 Symbol V(BR)CBO VCEO(SUS) V(BR)EBO ICBO IEBO hFE Min. -32 -32 -5 40 85 Typ. - Max. - -100 -1 375 Unit V V V µA mA Collector - Emitter Saturation Voltage 1 Base – Emitter Voltage 1 Transition frequency Note: 1. Pulse test VCE(sat) VBE fT 50 3 -- -0.5 V - -1 V - - MHz Test Conditions IC= -0.1mA, IE=0 IC= -100mA, IB=0 IC=0, IE= -0.1mA VCB= -32V, IE= 0 VEB= -5V, IC= 0 VCE= -5V, I...




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